samsung 860 evo m.2 MZ-N6E500BW

Sequential Read Speed : Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration Sequential Write Speed : Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration Random Read Speed : Random Read (4KB, QD32): Up to 97,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration Random Write Speed : Random Write (4KB, QD32): Up to 88,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write * Performance may vary based on Compatibility : Compatible with SATA 3 Gb/s and SATA 1.5 Gb/s interface Controller : Samsung MJX Controller NAND Type Samsung V-NAND 3bit MLC Cache Memory Samsung 512 GB Low Power DDR4 SDRAM Trim Support Yes AES Encryption AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) Security AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) S.M.A.R.T. Support Yes GC (Garbage Collection) Auto Garbage Collection Algorithm WWN Support World Wide Name supported Device Sleep Mode Support Yes Internal Storage Yes